Backside Metallization Solution "ECLIPSE"
DC pulse sputtering is possible (reactive sputtering of insulating films using conductive targets)!
"ECLIPSE" is a sputtering device using a side sputtering method for front and backside metallization, as well as for the deposition of dielectrics and piezoelectric materials. It also features a uniquely developed transport mechanism that accommodates ultra-thin wafers and fragile substrates. This device is recommended for engineers facing challenges with continuous deposition and wafer transport in sputtering processes such as backside metallization and under bump metal. 【Features】 ■ Non-contact wafer transport mechanism ■ Compatible with production 150mm wafers (wafer thickness: 250μm) ■ Also compatible with production 100mm wafers (wafer thickness: 130μm) ■ Wafer self-centering capability *For more details, please feel free to contact us.
- Company：プラズマ・サーモ・ジャパン
- Price：Other
